Random telegraph signals in charge coupled devices
نویسندگان
چکیده
منابع مشابه
Visualisation Techniques for Random Telegraph Signals in MOSFETs
In the study of LF noise in MOSFETS, it has become clear that Random Telegraph Signals (RTS) are dominant. When a MOSFET is subjected to large-signal excitation, the RTS noise is influenced. In this paper, we present different visualizations of the transient behaviour of the RTS. Keywords— MOSFET, Random Telegraph Signal, Large Signal Excitation, LF Noise.
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 2004
ISSN: 0168-9002
DOI: 10.1016/j.nima.2004.03.210